VMO1200-01F
- Mfr.Part #
- VMO1200-01F
- Manufacturer
- Littelfuse
- Package / Case
- Y3-Li
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 1220A Y3-LI
- Stock
- 105
- In Stock :
- 105
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Manufacturer :
- IXYS
- Minimum Operating Temperature :
- - 40 C
- Package :
- Tray
- Number of Terminations :
- 4
- Polarity/Channel Type :
- N-Channel
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Chassis Mount
- ECCN Code :
- EAR99
- RoHS :
- Details
- Mount :
- Chassis Mount
- Terminal Form :
- UNSPECIFIED
- FET Type :
- N-Channel
- Qualification Status :
- Not Qualified
- Number of Terminals :
- 4
- DS Breakdown Voltage-Min :
- 100V
- Brand :
- IXYS
- Drain-source On Resistance-Max :
- 0.00125Ohm
- Vgs(th) (Max) @ Id :
- 4V @ 64mA
- Number of Elements :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mounting Style :
- Screw Mounts
- Terminal Position :
- UPPER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Product :
- Power MOSFET Modules
- Maximum Operating Temperature :
- + 150 C
- Product Type :
- Discrete Semiconductor Modules
- Series :
- HiPerFET™
- Reach Compliance Code :
- not_compliant
- Transistor Application :
- SWITCHING
- Published :
- 2010
- Drain Current-Max (Abs) (ID) :
- 1220A
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Package / Case :
- Y3-Li
- Rds On (Max) @ Id, Vgs :
- 1.35m Ω @ 932A, 10V
- Pin Count :
- 4
- JESD-30 Code :
- R-XUFM-X4
- Pbfree Code :
- yes
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Surface Mount :
- No
- Drain to Source Voltage (Vdss) :
- 100V
- Package Shape :
- RECTANGULAR
- Supplier Device Package :
- Y3-Li
- Continuous Drain Current (ID) :
- 1.245kA
- Gate Charge (Qg) (Max) @ Vgs :
- 2520nC @ 10V
- Product Category :
- Discrete Semiconductor Modules
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Base Part Number :
- VMO
- Packaging :
- Tray
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Operating Temperature :
- -40°C~150°C TJ
- Case Connection :
- Isolated
- Vgs (Max) :
- ±20V
- Type :
- Single Switch MOSFET Module
- Current - Continuous Drain (Id) @ 25°C :
- 1220A Tc
- FET Feature :
- --
- Product Status :
- Active
- Power Dissipation (Max) :
- --
- Lead Free :
- Lead Free
- Base Product Number :
- VMO1200
- Datasheets
- VMO1200-01F

N-Channel Tray 1.35m Ω @ 932A, 10V ±20V 2520nC @ 10V 100V Y3-Li
VMO1200-01F Description
The VMO1200-01F is a MOSFET N-CH 100V 1220A Y3-LI, N-Channel Enhancement Mode. The most typical method for creating the type of field-effect transistor (FET) known as a metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is by carefully controlling the oxidation of silicon. The conductivity of the device is controlled by the voltage of an insulated gate. Electronic signals can be amplified or switched using this property of conductivity that changes with the amount of applied voltage. A MOSFET is generally always referred to as a metal-insulator-semiconductor field-effect transistor (MISFET). An insulated-gate field-effect transistor (IGFET) is another alternative term.
VMO1200-01F Features
-
Package
- low inductive current path
- screw connection to high current main terminals
- use of non interchangeable connectors for auxiliary terminals possible
- Kelvin source terminals for easy drive
- isolated DCB ceramic base plate
-
PolarHT™ MOSFET technology
- low RDSon
- dv/dt ruggedness
- fast intrinsic reverse diode
-
VDSS = 100V
-
ID25 = 1220A
-
RDS(on) = 1.25mΩ max
VMO1200-01F Applications
-
Converters with high power density for
- main and auxiliary AC drives of electric vehicles
- DC drives
- power supplies
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