UPA2708GR-E2-A

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

30 V

Surface Mount :

yes

JESD-609 Code :

e6

Avalanche Energy Rating (Eas) :

28.9 mJ

Pin Count :

8

Polarity/Channel Type :

N-Channel

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Package :

Bulk

Number of Elements :

1

DS Breakdown Voltage-Min :

30 V

Terminal Finish :

TIN BISMUTH

Reach Compliance Code :

Compliant

ECCN Code :

EAR99

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

68 A

Package Shape :

RECTANGULAR

Terminal Position :

Dual

Product Status :

Active

Series :

*

Continuous Drain Current (ID) :

17 A

Number of Terminals :

8

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Qualification Status :

Not Qualified

Drain to Source Resistance :

5.6 mΩ

Drain-source On Resistance-Max :

0.0075 Ω

JESD-30 Code :

R-PDSO-G8

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation :

1.1 W

Manufacturer :

NEC Electronics Group

Transistor Application :

SWITCHING