TPS2812P

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Mfr.Part #
TPS2812P
Manufacturer
Texas Instruments
Package / Case
8-DIP (0.300, 7.62mm)
Datasheet
Download
Description
IC GATE DRVR LOW-SIDE 8DIP
Stock
37
In Stock :
37

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Manufacturer :
Texas Instruments
Product Category :
Gate Drivers
Factory Lead Time :
6 Weeks
Output Characteristics :
TOTEM-POLE
Turn On Time :
0.05 μs
Max Power Dissipation :
1.09W
Voltage - Supply :
4V~14V
Packaging :
Tube
Number of Functions :
2
Rise Time :
35ns
Lead Free :
Lead Free
Weight :
440.409842mg
Terminal Position :
Dual
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Channel Type :
SYNCHRONOUS
Pin Count :
8
Terminal Finish :
Nickel/Palladium/Gold (Ni/Pd/Au)
ECCN Code :
EAR99
Base Part Number :
TPS2812
RoHS Status :
ROHS3 Compliant
Output Current :
2A
Output Peak Current Limit-Nom :
2A
Package / Case :
8-DIP (0.300, 7.62mm)
Width :
6.35mm
Length :
9.81mm
Height :
5.08mm
Power Supplies :
10V
Max Output Current :
2A
Mount :
Through Hole
Output Voltage :
13V
Gate Type :
N-Channel, P-Channel MOSFET
REACH SVHC :
No SVHC
Thickness :
3.9mm
Nominal Supply Current :
5mA
Input Characteristics :
Schmitt Trigger
Mounting Type :
Through Hole
Number of Outputs :
2
Input Type :
Non-Inverting
Turn On Delay Time :
50 ns
Current - Peak Output (Source, Sink) :
2A 2A
Logic Voltage - VIL, VIH :
1V 4V
JESD-609 Code :
e4
Radiation Hardening :
No
High Side Driver :
yes
Rise / Fall Time (Typ) :
14ns 15ns
Pbfree Code :
yes
Fall Time (Typ) :
35 ns
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Operating Temperature :
-40°C~125°C TA
Number of Terminations :
8
Driven Configuration :
Low-Side
Interface IC Type :
NAND GATE BASED MOSFET DRIVER
Power Dissipation :
1.09W
Number of Pins :
8
Supply Voltage :
10V
Turn Off Time :
0.05 μs
Output Polarity :
TRUE
Propagation Delay :
50 ns
Datasheets
TPS2812P
Introducing Gate Drivers Texas Instruments TPS2812P from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:TPS2812, Package / Case:8-DIP (0.300, 7.62mm), Mounting Type:Through Hole, Operating Temperature:-40°C~125°C TA, Number of Terminations:8, Number of Pins:8, TPS2812P pinout, TPS2812P datasheet PDF, TPS2812P amp .Beyond Gate Drivers Texas Instruments TPS2812P ,we also offer FAN3180TSX, DGD2104MS8-13, IRS2005STRPBF, Our vast inventory has you covered. Contact us now for immediate solutions.

Texas Instruments TPS2812P


[Gate Drivers Texas Instruments TPS2812P] Overview

Welcome to the cutting-edge world of gate drivers, brought to you by Texas Instruments and their remarkable TPS2812P integrated circuit. In today's fast-paced electronic landscape, efficiency and precision are paramount, and this gate driver delivers on both fronts with aplomb.

Designed to meet the exacting demands of modern electronic systems, the TPS2812P is a low-side gate driver IC housed in an 8-pin DIP package. Its compact form factor belies its impressive capabilities, making it an ideal choice for a wide range of applications.

Whether you're designing power supplies, motor controls, or high-frequency inverters, this gate driver excels in driving MOSFETs and other power switches with speed and reliability. Its robust design ensures stable performance even in harsh operating conditions, making it a trusted companion for your most demanding projects.

TPS2812P Features

  • Low-side gate driver IC
  • 8-pin DIP package
  • High-speed switching capability
  • Wide operating voltage range
  • Internal logic-level translation
  • Integrated undervoltage lockout
  • Overcurrent protection
  • Thermal shutdown protection
  • Robust and reliable performance

TPS2812P Applications

  • Power supplies: The TPS2812P is indispensable in DC-DC converters and voltage regulators, ensuring efficient power delivery and stable operation.
  • Motor controls: From industrial machinery to automotive systems, this gate driver enables precise control of motor speed and direction, enhancing performance and reliability.
  • High-frequency inverters: In applications such as solar inverters and uninterruptible power supplies (UPS), the TPS2812P facilitates smooth and efficient switching of power MOSFETs, maximizing energy conversion efficiency.
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