TPS2811DR

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Mfr.Part #
TPS2811DR
Manufacturer
Texas Instruments
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
IC GATE DRVR LOW-SIDE 8SOIC
Stock
3,808
In Stock :
3,808

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Manufacturer :
Texas Instruments
Product Category :
Gate Drivers
Width :
3.91mm
Output Polarity :
INVERTED
Max Output Current :
2mA
Weight :
75.891673mg
Power Dissipation :
730mW
Power Supplies :
10V
Output Current :
2A
High Side Driver :
yes
Max Power Dissipation :
730mW
Lead Free :
Lead Free
Peak Reflow Temperature (Cel) :
260
Pbfree Code :
yes
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Number of Terminations :
8
Package / Case :
8-SOIC (0.154, 3.90mm Width)
Length :
4.9mm
Number of Functions :
2
Terminal Form :
Gull wing
Number of Outputs :
2
Turn Off Time :
0.05 μs
Factory Lead Time :
6 Weeks
Terminal Finish :
Nickel/Palladium/Gold (Ni/Pd/Au)
Thickness :
1.58mm
JESD-609 Code :
e4
Supply Voltage :
10V
Terminal Position :
Dual
Interface IC Type :
NAND GATE BASED MOSFET DRIVER
Pin Count :
8
Turn On Time :
0.05 μs
Rise / Fall Time (Typ) :
14ns 15ns
Nominal Supply Current :
200nA
Base Part Number :
TPS2811
Propagation Delay :
50 ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate Type :
N-Channel, P-Channel MOSFET
Channel Type :
SYNCHRONOUS
Height :
1.75mm
ECCN Code :
EAR99
Turn On Delay Time :
50 ns
Input Characteristics :
Schmitt Trigger
Number of Pins :
8
Mount :
Surface Mount
Output Peak Current Limit-Nom :
2A
Radiation Hardening :
No
Output Characteristics :
TOTEM-POLE
Input Type :
Inverting
Rise Time :
35ns
Mounting Type :
Surface Mount
RoHS Status :
ROHS3 Compliant
Current - Peak Output (Source, Sink) :
2A 2A
Voltage - Supply :
4V~14V
Packaging :
Tape and Reel (TR)
Operating Temperature :
-40°C~125°C TA
Driven Configuration :
Low-Side
Fall Time (Typ) :
35 ns
Logic Voltage - VIL, VIH :
1V 4V
Datasheets
TPS2811DR
Introducing Gate Drivers Texas Instruments TPS2811DR from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:8, Package / Case:8-SOIC (0.154, 3.90mm Width), Base Part Number:TPS2811, Number of Pins:8, Mounting Type:Surface Mount, Operating Temperature:-40°C~125°C TA, TPS2811DR pinout, TPS2811DR datasheet PDF, TPS2811DR amp .Beyond Gate Drivers Texas Instruments TPS2811DR ,we also offer FAN3180TSX, DGD2104MS8-13, IRS2005STRPBF, Our vast inventory has you covered. Contact us now for immediate solutions.

Texas Instruments TPS2811DR


Gate Drivers Texas Instruments TPS2811DR Overview

The TPS2811DR from Texas Instruments is a high-performance, low-side gate driver designed to address the stringent demands of modern electronic circuits. This driver integrates robust features into a compact 8SOIC package, providing a solution that enhances the efficiency and reliability of applications requiring efficient switching. The Gate Drivers Texas Instruments TPS2811DR excels in delivering rapid switching performances and robust drive strength, making it an ideal choice for professionals looking to optimize their power management systems. With its precision and power, the TPS2811DR is tailored to boost the performance of your high-frequency switching applications, ensuring minimal delay and reduced power wastage.

TPS2811DR Features

The TPS2811DR boasts a range of features that ensure superior performance in demanding environments. These include high peak output current and matched propagation delays—characteristics essential for achieving efficient, reliable switching in various applications. Additionally, the device offers built-in protection against under-voltage, enhancing system safety and longevity.

TPS2811DR Applications

  • Motor Control Systems: Utilized in driving low-side MOSFETs and IGBTs, the TPS2811DR ensures robust and efficient control over motor operations in industrial automation systems.
  • Power Supplies: Supports critical switching functions in power conversion systems, contributing to stable and efficient power supply operations.
  • LED Lighting: Used in the switching elements of LED drivers, facilitating precise control over lighting conditions and enhancing energy efficiency.
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