TPH2R903PL,L1Q

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Power Dissipation (Max) :

960mW (Ta), 81W (Tc)

Configuration :

Single

Tradename :

U-MOSIX-H

Current - Continuous Drain (Id) @ 25°C :

70A (Tc)

Package :

Tape and Reel (TR)

Manufacturer :

Toshiba

Brand :

Toshiba

Package / Case :

8-PowerVDFN

Minimum Operating Temperature :

- 55 C

Number of Channels :

1 Channel

Mounting Style :

SMD/SMT

FET Feature :

-

RoHS :

Details

Supplier Device Package :

8-SOP Advance (5x5)

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

26 nC @ 10 V

Mounting Type :

Surface Mount

Maximum Operating Temperature :

+ 175 C

Rise Time :

4.7 ns

Product Status :

Active

Channel Mode :

Enhancement

Product Type :

MOSFET

Operating Temperature :

175°C

Input Capacitance (Ciss) (Max) @ Vds :

2300 pF @ 15 V

Series :

U-MOSIX-H

Product Category :

MOSFET

Drain to Source Voltage (Vdss) :

30 V

Transistor Type :

1 N-Channel

Rds On (Max) @ Id, Vgs :

2.9mOhm @ 35A, 10V

Packaging :

Reel

Subcategory :

MOSFETs

Vgs(th) (Max) @ Id :

2.1V @ 200μA

Transistor Polarity :

N-Channel

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V