TN2640K4-G

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Mfr.Part #
TN2640K4-G
Manufacturer
Microchip Technology
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 400V 500MA TO252
Stock
11,846
In Stock :
11,846

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Base Product Number :
TN2640
Power Dissipation :
2.5W
Transistor Polarity :
N-Channel
Rds On (Max) @ Id, Vgs :
5 Ω @ 500mA, 10V
Operating Mode :
ENHANCEMENT MODE
ECCN Code :
EAR99
Packaging :
Tape and Reel (TR)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Terminal Form :
Gull wing
Length :
6.73mm
Terminal Finish :
MATTE TIN
Drain Current-Max (Abs) (ID) :
0.5A
Vgs(th) (Max) @ Id :
2V @ 2mA
RoHS Status :
ROHS3 Compliant
Supplier Device Package :
TO-252, (D-Pak)
Power Dissipation-Max :
2.5W Ta
Fall Time (Typ) :
22 ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
JEDEC-95 Code :
TO-252AA
Height :
2.39mm
Current - Continuous Drain (Id) @ 25°C :
500mA Tj
Number of Channels :
1
RoHS :
Details
Transistor Element Material :
SILICON
Power Dissipation (Max) :
2.5W (Ta)
Mount :
Surface Mount
Published :
2013
Configuration :
Single
Qualification Status :
Not Qualified
Case Connection :
DRAIN
Gate to Source Voltage (Vgs) :
20V
Operating Temperature :
-55°C~150°C TJ
FET Type :
N-Channel
JESD-30 Code :
R-PSSO-G2
Factory Lead Time :
7 Weeks
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Qualification :
-
Turn On Delay Time :
4 ns
Vgs (Max) :
±20V
Drain-source On Resistance-Max :
5Ohm
Brand :
Microchip Technology / Atmel
Product Type :
MOSFET
Channel Type :
N Channel
Transistor Type :
1 N-Channel
Continuous Drain Current Id :
500
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Manufacturer :
Microchip
Product Category :
MOSFET
Additional Feature :
LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE, LOW THRESHOLD
Input Capacitance (Ciss) (Max) @ Vds :
225pF @ 25V
JESD-609 Code :
e3
Drain to Source Voltage (Vdss) :
400V
Mounting Style :
SMD/SMT
Continuous Drain Current (ID) :
2A
Package :
Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
Channel Mode :
Enhancement
Turn-Off Delay Time :
20 ns
FET Feature :
--
Weight :
3.949996g
Drain to Source Breakdown Voltage :
400V
Maximum Operating Temperature :
+ 150 C
Width :
6.1mm
MSL :
MSL 3 - 168 hours
Minimum Operating Temperature :
- 55 C
Type :
FET
Mounting Type :
Surface Mount
Product Status :
Active
Number of Elements :
1
Transistor Application :
SWITCHING
Rise Time :
15ns
Element Configuration :
Single
Number of Terminations :
2
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Series :
--
Datasheets
TN2640K4-G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology TN2640K4-G from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Type:FET, Mounting Type:Surface Mount, Number of Terminations:2, TN2640K4-G pinout, TN2640K4-G datasheet PDF, TN2640K4-G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology TN2640K4-G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology TN2640K4-G


N-Channel Tape & Reel (TR) 5 Ω @ 500mA, 10V ±20V 225pF @ 25V 400V TO-252-3, DPak (2 Leads + Tab), SC-63

TN2640K4-G Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 225pF @ 25V.This device conducts a continuous drain current (ID) of 2A, which is the maximum continuous current transistor can conduct.Using VGS=400V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 400V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 0.5A.When the device is turned off, a turn-off delay time of 20 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 4 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.This transistor requires a drain-source voltage (Vdss) of 400V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).

TN2640K4-G Features


a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 400V voltage
the turn-off delay time is 20 ns
a 400V drain to source voltage (Vdss)


TN2640K4-G Applications


There are a lot of Microchip Technology
TN2640K4-G applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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