TN2504N8-G
- Mfr.Part #
- TN2504N8-G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 890MA TO243AA
- Stock
- 20,167
- In Stock :
- 20,167
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 10ns
- Terminal Finish :
- Matte Tin (Sn)
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Drain-Source On-Volt :
- 40(V)
- Subcategory :
- MOSFETs
- Transistor Application :
- SWITCHING
- Power Dissipation (Max) :
- 1.6W (Tc)
- Drain-source On Resistance-Max :
- 1Ohm
- Turn-Off Delay Time :
- 25 ns
- Package Type :
- SOT-89
- Height :
- 1.6mm
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 8 Weeks
- Channel Mode :
- Enhancement
- Transistor Type :
- 1 N-Channel
- Power Dissipation-Max :
- 1.6W Tc
- Rad Hardened :
- No
- RoHS :
- Details
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Supplier Device Package :
- TO-243AA (SOT-89)
- Package / Case :
- TO-243AA
- Vgs(th) (Max) @ Id :
- 1.6V @ 1mA
- Continuous Drain Current (ID) :
- 890mA
- Number of Pins :
- 4
- Maximum Operating Temperature :
- + 150 C
- Qualification Status :
- Not Qualified
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Element Configuration :
- Single
- Product Status :
- Active
- Weight :
- 52.786812mg
- Number of Channels :
- 1
- Operating Mode :
- ENHANCEMENT MODE
- Product :
- MOSFET Small Signal
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Continuous Drain Current :
- 0.89(A)
- Terminal Form :
- Flat
- Operating Temperature Classification :
- Military
- Drain to Source Breakdown Voltage :
- 40V
- Case Connection :
- DRAIN
- Width :
- 2.6mm
- Mounting :
- Surface Mount
- FET Feature :
- --
- Number of Terminations :
- 3
- Vgs (Max) :
- ±20V
- Continuous Drain Current Id :
- 890
- Peak Reflow Temperature (Cel) :
- 260
- Type :
- Power MOSFET
- Power Dissipation :
- 1.6W
- Packaging :
- Tape and Reel (TR)
- Drain to Source Voltage (Vdss) :
- 40V
- Channel Type :
- N
- Polarity :
- N
- Series :
- --
- Manufacturer :
- Microchip
- Gate-Source Voltage (Max) :
- ±20(V)
- Pin Count :
- 3 +Tab
- RoHS Status :
- ROHS3 Compliant
- Mounting Style :
- SMD/SMT
- JESD-30 Code :
- R-PSSO-F3
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Temp Range :
- -55C to 150C
- Brand :
- Microchip Technology / Atmel
- Minimum Operating Temperature :
- - 55 C
- Turn On Delay Time :
- 10 ns
- Length :
- 4.6mm
- Transistor Polarity :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 890mA Tj
- Product Category :
- MOSFET
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- N-Channel
- Product Type :
- MOSFET
- Fall Time (Typ) :
- 10 ns
- Published :
- 2013
- Input Capacitance (Ciss) (Max) @ Vds :
- 125pF @ 20V
- Configuration :
- Single
- Drain Current-Max (Abs) (ID) :
- 0.89A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Product Number :
- TN2504
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Rds On (Max) @ Id, Vgs :
- 1 Ω @ 1.5A, 10V
- Package :
- Tape and Reel (TR);Cut Tape (CT);Digi-Reel®;
- Datasheets
- TN2504N8-G

N-Channel Tape & Reel (TR) 1 Ω @ 1.5A, 10V ±20V 125pF @ 20V 40V TO-243AA
TN2504N8-G Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 125pF @ 20V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 890mA.With a drain-source breakdown voltage of 40V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 40V.0.89A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 25 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 10 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 40V.Using drive voltage (5V 10V) reduces this device's overall power consumption.
TN2504N8-G Features
a continuous drain current (ID) of 890mA
a drain-to-source breakdown voltage of 40V voltage
the turn-off delay time is 25 ns
a 40V drain to source voltage (Vdss)
TN2504N8-G Applications
There are a lot of Microchip Technology
TN2504N8-G applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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