TK9A90E,S4X

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 900μA

Current - Continuous Drain (Id) @ 25°C :

9A Ta

Min Operating Temperature :

-55°C

Published :

2014

Element Configuration :

Single

Max Operating Temperature :

150°C

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

Package / Case :

TO-220-3 Full Pack

Drain to Source Resistance :

1Ohm

Packaging :

Tube

Vgs (Max) :

±30V

Continuous Drain Current (ID) :

9A

Mounting Type :

Through Hole

Operating Temperature :

150°C TJ

RoHS Status :

RoHS Compliant

Mount :

Through Hole

Supplier Device Package :

TO-220SIS

Rds On Max :

1.3 Ω

Series :

π-MOSVIII

Number of Channels :

1

Turn-Off Delay Time :

140 ns

Rds On (Max) @ Id, Vgs :

1.3Ohm @ 4.5A, 10V

Rise Time :

40ns

FET Type :

N-Channel

Turn On Delay Time :

80 ns

Input Capacitance :

2nF

Weight :

6.000006g

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

2000pF @ 25V

Fall Time (Typ) :

35 ns

Drain to Source Voltage (Vdss) :

900V

Factory Lead Time :

12 Weeks

Power Dissipation-Max :

50W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V