TK5P53D(T6RSS-Q)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Min Operating Temperature :

-55°C

Turn-Off Delay Time :

55 ns

Mount :

Surface Mount

Vgs (Max) :

±30V

Gate to Source Voltage (Vgs) :

30V

Continuous Drain Current (ID) :

5A

Packaging :

Tape and Reel (TR)

Rds On Max :

1.5 Ω

Turn On Delay Time :

40 ns

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Rds On (Max) @ Id, Vgs :

1.5Ohm @ 2.5A, 10V

Power Dissipation-Max :

80W Tc

Rise Time :

18ns

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

16 Weeks

Fall Time (Typ) :

8 ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Height :

2.3mm

Vgs(th) (Max) @ Id :

4.4V @ 1mA

Drain to Source Resistance :

1.5Ohm

Published :

2010

Threshold Voltage :

2.4V

RoHS Status :

RoHS Compliant

Power Dissipation :

80W

Drain to Source Voltage (Vdss) :

525V

Max Operating Temperature :

150°C

Supplier Device Package :

D-Pak

Input Capacitance (Ciss) (Max) @ Vds :

540pF @ 25V

REACH SVHC :

Unknown

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance :

540pF

Operating Temperature :

150°C TJ

Current - Continuous Drain (Id) @ 25°C :

5A Ta

Length :

6.6mm

Element Configuration :

Single

FET Type :

N-Channel

Width :

6.1mm

Number of Pins :

3

Lead Free :

Lead Free

Mounting Type :

Surface Mount