TK4P60D,RQ

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

600 V

RoHS :

Details

Power Dissipation (Max) :

100W (Tc)

Vgs(th) (Max) @ Id :

4.4V @ 1mA

Technology :

Si

Operating Temperature :

150°C

FET Type :

N-Channel

Drive Voltage (Max Rds On, Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

1.7Ohm @ 2A, 10V

FET Feature :

-

Configuration :

Single

Maximum Operating Temperature :

+ 150 C

Gate Charge (Qg) (Max) @ Vgs :

12 nC @ 10 V

Product Status :

Active

Rise Time :

18 ns

Mounting Style :

SMD/SMT

Transistor Type :

1 N-Channel

Brand :

Toshiba

Package :

Tape and Reel (TR)

Supplier Device Package :

DPAK

Vgs (Max) :

±30V

Package / Case :

DPAK-3

Manufacturer :

Toshiba

Packaging :

MouseReel

Channel Mode :

Enhancement

Current - Continuous Drain (Id) @ 25°C :

4A (Ta)

Mounting Type :

Surface Mount

Transistor Polarity :

N-Channel

Minimum Operating Temperature :

- 55 C

Product Type :

MOSFET

Series :

TK4P60D

Subcategory :

MOSFETs

Tradename :

MOSVII

Number of Channels :

1 Channel

Input Capacitance (Ciss) (Max) @ Vds :

600 pF @ 25 V

Product Category :

MOSFET