TK3P80E,RQ

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

-

Gate Charge (Qg) (Max) @ Vgs :

12 nC @ 10 V

Manufacturer :

Toshiba

Vgs (Max) :

±30V

Subcategory :

MOSFETs

Rds On (Max) @ Id, Vgs :

4.9Ohm @ 1.5A, 10V

Number of Channels :

1 Channel

Input Capacitance (Ciss) (Max) @ Vds :

500 pF @ 25 V

Current - Continuous Drain (Id) @ 25°C :

3A (Ta)

Mounting Type :

Surface Mount

Maximum Operating Temperature :

+ 150 C

Product Status :

Active

FET Feature :

-

Power Dissipation (Max) :

80W (Tc)

Product Type :

MOSFET

Tradename :

MOSVIII

Supplier Device Package :

DPAK

Rise Time :

25 ns

Transistor Polarity :

N-Channel

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Style :

SMD/SMT

Channel Mode :

Enhancement

Transistor Type :

1 N-Channel

Packaging :

MouseReel

Vgs(th) (Max) @ Id :

4V @ 300μA

Drain to Source Voltage (Vdss) :

800 V

FET Type :

N-Channel

Operating Temperature :

150°C

Product Category :

MOSFET

Brand :

Toshiba

Package :

Tape and Reel (TR)

RoHS :

Details

Minimum Operating Temperature :

- 55 C

Drive Voltage (Max Rds On, Min Rds On) :

10V

Configuration :

Single