TK20V60W,LVQ

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

100 ns

FET Type :

N-Channel

Continuous Drain Current (ID) :

20A

Vgs (Max) :

±30V

Current - Continuous Drain (Id) @ 25°C :

20A Ta

Drain to Source Resistance :

170mOhm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

48nC @ 10V

Supplier Device Package :

4-DFN-EP (8x8)

Operating Temperature :

150°C TJ

Rds On Max :

170 mΩ

Mount :

Surface Mount

Published :

2014

Drain to Source Breakdown Voltage :

600V

Factory Lead Time :

16 Weeks

Gate to Source Voltage (Vgs) :

30V

Fall Time (Typ) :

6 ns

Package / Case :

4-VSFN Exposed Pad

Vgs(th) (Max) @ Id :

3.7V @ 1mA

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

600V

RoHS Status :

RoHS Compliant

Series :

DTMOSIV

Input Capacitance (Ciss) (Max) @ Vds :

1680pF @ 300V

Number of Channels :

1

Power Dissipation-Max :

156W Tc

Max Operating Temperature :

150°C

Input Capacitance :

1.68nF

Number of Pins :

5

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

50 ns

FET Feature :

Super Junction

Min Operating Temperature :

-55°C

Radiation Hardening :

No

Rds On (Max) @ Id, Vgs :

170mOhm @ 10A, 10V

Rise Time :

25ns