TK155A65Z,S4X

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Drive Voltage (Max Rds On, Min Rds On) :

10V

Configuration :

Single

Package / Case :

TO-220-3 Full Pack

Transistor Polarity :

N-Channel

Product Status :

Active

Transistor Type :

1 N-Channel

RoHS :

Details

Rds On (Max) @ Id, Vgs :

155mOhm @ 9A, 10V

Brand :

Toshiba

Product Type :

MOSFET

Power Dissipation (Max) :

40W (Tc)

Supplier Device Package :

TO-220SIS

Input Capacitance (Ciss) (Max) @ Vds :

1635 pF @ 300 V

Minimum Operating Temperature :

- 55 C

FET Feature :

-

Vgs(th) (Max) @ Id :

4V @ 730μA

Gate Charge (Qg) (Max) @ Vgs :

29 nC @ 10 V

Product Category :

MOSFET

Subcategory :

MOSFETs

Operating Temperature :

150°C

Packaging :

Tube

Maximum Operating Temperature :

+ 150 C

Package :

Tube

Mounting Style :

Through Hole

Rise Time :

23 ns

Number of Channels :

1 Channel

Base Product Number :

TK155A65

Series :

DTMOSVI

Channel Mode :

Enhancement

Current - Continuous Drain (Id) @ 25°C :

18A (Ta)

Manufacturer :

Toshiba

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

650 V

Vgs (Max) :

±30V