TIP36A
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- Mfr.Part #
- TIP36A
- Manufacturer
- Central Semiconductor
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- TRANS PNP 60V 25A TO218
- Stock
- 28,661
- In Stock ：
- 28,661
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- Manufacturer :
- Central Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Weight :
- 4.535924g
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Surface Mount :
- No
- Contact Plating :
- Tin
- Current - Collector Cutoff (Max) :
- 1mA
- Length :
- 6.35mm
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Height :
- 6.35mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 15A 4V
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 3MHz
- Polarity/Channel Type :
- PNP
- Max Breakdown Voltage :
- 60V
- Frequency :
- 3MHz
- Packaging :
- Tube
- JESD-609 Code :
- e3
- Package / Case :
- TO-247-3
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Base Part Number :
- TIP36
- Pin Count :
- 3
- Published :
- 2005
- Current Rating :
- 25A
- REACH SVHC :
- No SVHC
- Width :
- 38.1mm
- Voltage - Rated DC :
- 60V
- Max Power Dissipation :
- 125W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 60V
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 2 Weeks
- Collector Emitter Breakdown Voltage :
- 60V
- hFE Min :
- 25
- Operating Temperature :
- -65°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 4V @ 5A, 25A
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Saturation Voltage :
- 1.8V
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power Dissipation :
- 125W
- Collector Base Voltage (VCBO) :
- 60V
- Number of Elements :
- 1
- Max Collector Current :
- 25A
- Radiation Hardening :
- No
- Gain Bandwidth Product :
- 3MHz
- Transistor Type :
- PNP
- Case Connection :
- COLLECTOR
- Datasheets
- TIP36A
PNP -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON PNP TO-247-3 Tube Through Hole
TIP36AG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 15 @ 15A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.8V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 4V @ 5A, 25A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 25A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 3MHz.Single BJT transistor can take a breakdown input voltage of 60V volts.During maximum operation, collector current can be as low as 25A volts.
TIP36AG Features
the DC current gain for this device is 15 @ 15A 4V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 4V @ 5A, 25A
the emitter base voltage is kept at 5V
the current rating of this device is 25A
a transition frequency of 3MHz
TIP36AG Applications
There are a lot of ON Semiconductor
TIP36AG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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