TIP35A

Manufacturer :

NTE Electronics, Inc.

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Element Material :

SILICON

Power Dissipation :

125W

Published :

2005

Collector Emitter Voltage (VCEO) :

60V

RoHS Status :

ROHS3 Compliant

Polarity/Channel Type :

NPN

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Max Power Dissipation :

125W

JESD-609 Code :

e3

Radiation Hardening :

No

Transistor Type :

NPN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

4.535924g

Pbfree Code :

yes

Height :

6.35mm

Mounting Type :

Through Hole

ECCN Code :

EAR99

Current - Collector Cutoff (Max) :

1mA

Collector Emitter Breakdown Voltage :

60V

Package / Case :

TO-247-3

REACH SVHC :

No SVHC

Transition Frequency :

3MHz

Frequency :

3MHz

Terminal Finish :

Tin (Sn)

Operating Temperature :

-65°C~150°C TJ

hFE Min :

25

Max Collector Current :

25A

Current Rating :

25A

Time@Peak Reflow Temperature-Max (s) :

40

Gain Bandwidth Product :

3MHz

Number of Terminations :

3

Emitter Base Voltage (VEBO) :

5V

Peak Reflow Temperature (Cel) :

260

Case Connection :

COLLECTOR

Voltage - Rated DC :

60V

Vce Saturation (Max) @ Ib, Ic :

4V @ 5A, 25A

Collector Emitter Saturation Voltage :

1.8V

Collector Base Voltage (VCBO) :

60V

DC Current Gain (hFE) (Min) @ Ic, Vce :

15 @ 15A 4V

Surface Mount :

No

Lead Free :

Lead Free

Length :

6.35mm

Transistor Application :

SWITCHING

Number of Elements :

1

Number of Pins :

3

Width :

25.4mm

Element Configuration :

Single

Packaging :

Tube

Factory Lead Time :

2 Weeks

Pin Count :

3