SUD08P06-155L-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

19nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

155m Ω @ 5A, 10V

Base Part Number :

SUD08P06

Pulsed Drain Current-Max (IDM) :

18A

Drain-source On Resistance-Max :

0.155Ohm

Series :

TrenchFET®

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

60V

Current - Continuous Drain (Id) @ 25°C :

8.4A Tc

Drain Current-Max (Abs) (ID) :

8.2A

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

Surface Mount :

yes

Pbfree Code :

yes

Power Dissipation-Max :

1.7W Ta 20.8W Tc

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

60V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Position :

Single

Terminal Form :

Gull wing

Pin Count :

4

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

3V @ 250µA

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

14 Weeks

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 25V

Avalanche Energy Rating (Eas) :

7.2 mJ

FET Type :

P-Channel