SUB75P03-07-E3
- Mfr.Part #
- SUB75P03-07-E3
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 75A TO263
- Stock
- 3,983
- In Stock :
- 3,983
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Width :
- 9.65mm
- Resistance :
- 7mOhm
- Mount :
- Surface Mount
- Number of Elements :
- 1
- Min Operating Temperature :
- -55°C
- Gate Charge (Qg) (Max) @ Vgs :
- 240nC @ 10V
- Continuous Drain Current (ID) :
- 75A
- Drain to Source Resistance :
- 7mOhm
- Turn On Delay Time :
- 25 ns
- Weight :
- 2.240009g
- Length :
- 10.41mm
- Rds On (Max) @ Id, Vgs :
- 7mOhm @ 30A, 10V
- Operating Temperature :
- -55°C~175°C TJ
- Packaging :
- Cut Tape (CT)
- Number of Channels :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- -30V
- Power Dissipation :
- 187W
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain to Source Voltage (Vdss) :
- 30V
- Rise Time :
- 225ns
- Current - Continuous Drain (Id) @ 25°C :
- 75A Tc
- Lead Free :
- Lead Free
- Max Operating Temperature :
- 175°C
- Gate to Source Voltage (Vgs) :
- 20V
- Mounting Type :
- Surface Mount
- Input Capacitance :
- 9nF
- FET Type :
- P-Channel
- Rds On Max :
- 7 mΩ
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package :
- TO-263 (D2Pak)
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Drain to Source Breakdown Voltage :
- -30V
- Input Capacitance (Ciss) (Max) @ Vds :
- 9000pF @ 25V
- Power Dissipation-Max :
- 3.75W Ta 187W Tc
- Height :
- 4.83mm
- Fall Time (Typ) :
- 210 ns
- Vgs (Max) :
- ±20V
- Turn-Off Delay Time :
- 150 ns
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Datasheets
- SUB75P03-07-E3
P-Channel Cut Tape (CT) 7mOhm @ 30A, 10V ±20V 9000pF @ 25V 240nC @ 10V 30V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
SUB75P03-07-E3 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 9000pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -30V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -30V.As a result of its turn-off delay time, which is 150 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 7mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 25 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).
SUB75P03-07-E3 Features
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 150 ns
single MOSFETs transistor is 7mOhm
a 30V drain to source voltage (Vdss)
SUB75P03-07-E3 Applications
There are a lot of Vishay Siliconix
SUB75P03-07-E3 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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