STY34NB50

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

AVALANCHE RATED

Drain to Source Breakdown Voltage :

500V

RoHS Status :

Non-RoHS Compliant

Lead Free :

Contains Lead

Voltage - Rated DC :

500V

Continuous Drain Current (ID) :

34A

Mounting Type :

Through Hole

Qualification Status :

Not Qualified

Pin Count :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

450W Tc

Power Dissipation :

450W

Pulsed Drain Current-Max (IDM) :

136A

Series :

PowerMESH™

ECCN Code :

EAR99

Rise Time :

32ns

Rds On (Max) @ Id, Vgs :

130m Ω @ 17A, 10V

Avalanche Energy Rating (Eas) :

1000 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

53 ns

Drain-source On Resistance-Max :

0.13Ohm

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

JESD-30 Code :

R-PSIP-T3

Vgs (Max) :

±30V

FET Type :

N-Channel

Number of Elements :

1

Vgs(th) (Max) @ Id :

5V @ 250μA

Base Part Number :

STY34N

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Package / Case :

TO-247-3

Input Capacitance (Ciss) (Max) @ Vds :

9100pF @ 25V

Transistor Application :

SWITCHING

Current Rating :

34A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

30V

Operating Temperature :

150°C TJ

Number of Pins :

247

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

223nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

34A Tc

Packaging :

Tube