STX112-AP
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- Mfr.Part #
- STX112-AP
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 2A TO92AP
- Stock
- 18,912
- In Stock ：
- 18,912
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Collector Emitter Breakdown Voltage :
- 100V
- Pin Count :
- 3
- Number of Terminations :
- 3
- Polarity :
- NPN
- Transistor Element Material :
- SILICON
- Terminal Position :
- BOTTOM
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Finish :
- Matte Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Operating Temperature :
- 150°C TJ
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 100V
- hFE Min :
- 500
- Max Collector Current :
- 2A
- Element Configuration :
- Single
- Base Part Number :
- STX112
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 8mA, 2A
- Mount :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 100V
- Current - Collector Cutoff (Max) :
- 2mA
- Max Power Dissipation :
- 1.2W
- Collector Base Voltage (VCBO) :
- 100V
- Collector Emitter Saturation Voltage :
- 2.5V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Current Rating :
- 2A
- Transistor Type :
- NPN - Darlington
- Packaging :
- Tape and Box (TB)
- Transistor Application :
- SWITCHING
- Terminal Form :
- Wire
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 1A 4V
- Voltage - Rated DC :
- 100V
- Additional Feature :
- BUILT IN BIAS RESISTANCE RATIO IS 0.0067
- Datasheets
- STX112-AP
NPN - Darlington 150°C TJ 2mA 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
STX112-AP Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 1000 @ 1A 4V.The collector emitter saturation voltage is 2.5V, which allows for maximum design flexibility.When VCE saturation is 2.5V @ 8mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 2A.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 2A volts can be achieved.
STX112-AP Features
the DC current gain for this device is 1000 @ 1A 4V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
STX112-AP Applications
There are a lot of STMicroelectronics
STX112-AP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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