STX112-AP

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Mfr.Part #
STX112-AP
Manufacturer
STMicroelectronics
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
TRANS NPN DARL 100V 2A TO92AP
Stock
18,912
In Stock :
18,912

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Max Breakdown Voltage :
100V
Mount :
Through Hole
Transistor Application :
SWITCHING
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 1A 4V
Transistor Type :
NPN - Darlington
Terminal Form :
Wire
Collector Emitter Saturation Voltage :
2.5V
Collector Base Voltage (VCBO) :
100V
Voltage - Rated DC :
100V
Lead Free :
Lead Free
Current Rating :
2A
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 8mA, 2A
ECCN Code :
EAR99
Collector Emitter Breakdown Voltage :
100V
Current - Collector Cutoff (Max) :
2mA
Polarity :
NPN
Number of Elements :
1
Pbfree Code :
yes
Max Power Dissipation :
1.2W
hFE Min :
500
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Terminations :
3
Terminal Position :
BOTTOM
Radiation Hardening :
No
Emitter Base Voltage (VEBO) :
5V
RoHS Status :
ROHS3 Compliant
Max Collector Current :
2A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Voltage (VCEO) :
100V
Operating Temperature :
150°C TJ
Number of Pins :
3
Base Part Number :
STX112
JESD-609 Code :
e3
Pin Count :
3
Mounting Type :
Through Hole
Element Configuration :
Single
Terminal Finish :
Matte Tin (Sn)
Transistor Element Material :
SILICON
Packaging :
Tape and Box (TB)
Additional Feature :
BUILT IN BIAS RESISTANCE RATIO IS 0.0067
Datasheets
STX112-AP
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics STX112-AP from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Number of Terminations:3, Operating Temperature:150°C TJ, Number of Pins:3, Base Part Number:STX112, Mounting Type:Through Hole, STX112-AP pinout, STX112-AP datasheet PDF, STX112-AP amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics STX112-AP ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STX112-AP


NPN - Darlington 150°C TJ 2mA 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole

STX112-AP Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 1000 @ 1A 4V.The collector emitter saturation voltage is 2.5V, which allows for maximum design flexibility.When VCE saturation is 2.5V @ 8mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 2A.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 2A volts can be achieved.

STX112-AP Features


the DC current gain for this device is 1000 @ 1A 4V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A


STX112-AP Applications


There are a lot of STMicroelectronics
STX112-AP applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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