STX112-AP
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- Mfr.Part #
- STX112-AP
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 2A TO92AP
- Stock
- 18,912
- In Stock ：
- 18,912
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 1A 4V
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Transistor Type :
- NPN - Darlington
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 100V
- Polarity :
- NPN
- Max Power Dissipation :
- 1.2W
- JESD-609 Code :
- e3
- Max Collector Current :
- 2A
- Terminal Position :
- BOTTOM
- Packaging :
- Tape and Box (TB)
- Transistor Application :
- SWITCHING
- Voltage - Rated DC :
- 100V
- Max Breakdown Voltage :
- 100V
- Terminal Finish :
- Matte Tin (Sn)
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 2mA
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 8mA, 2A
- Number of Terminations :
- 3
- Terminal Form :
- Wire
- Collector Emitter Saturation Voltage :
- 2.5V
- Element Configuration :
- Single
- Additional Feature :
- BUILT IN BIAS RESISTANCE RATIO IS 0.0067
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Current Rating :
- 2A
- hFE Min :
- 500
- Mount :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 100V
- Collector Emitter Voltage (VCEO) :
- 100V
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Base Part Number :
- STX112
- Datasheets
- STX112-AP
NPN - Darlington 150°C TJ 2mA 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
STX112-AP Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 1000 @ 1A 4V.The collector emitter saturation voltage is 2.5V, which allows for maximum design flexibility.When VCE saturation is 2.5V @ 8mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 2A.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 2A volts can be achieved.
STX112-AP Features
the DC current gain for this device is 1000 @ 1A 4V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
STX112-AP Applications
There are a lot of STMicroelectronics
STX112-AP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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