STX112-AP
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- Mfr.Part #
- STX112-AP
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 2A TO92AP
- Stock
- 18,912
- In Stock ：
- 18,912
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 1.2W
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Terminal Finish :
- Matte Tin (Sn)
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 8mA, 2A
- Max Breakdown Voltage :
- 100V
- Base Part Number :
- STX112
- Voltage - Rated DC :
- 100V
- RoHS Status :
- ROHS3 Compliant
- Polarity :
- NPN
- hFE Min :
- 500
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 1A 4V
- Current Rating :
- 2A
- Terminal Form :
- Wire
- Lead Free :
- Lead Free
- Terminal Position :
- BOTTOM
- Max Collector Current :
- 2A
- Operating Temperature :
- 150°C TJ
- Additional Feature :
- BUILT IN BIAS RESISTANCE RATIO IS 0.0067
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 100V
- Collector Base Voltage (VCBO) :
- 100V
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Collector Emitter Saturation Voltage :
- 2.5V
- Pbfree Code :
- yes
- Pin Count :
- 3
- Number of Elements :
- 1
- Number of Pins :
- 3
- Packaging :
- Tape and Box (TB)
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 100V
- Transistor Type :
- NPN - Darlington
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 2mA
- Datasheets
- STX112-AP
NPN - Darlington 150°C TJ 2mA 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
STX112-AP Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 1000 @ 1A 4V.The collector emitter saturation voltage is 2.5V, which allows for maximum design flexibility.When VCE saturation is 2.5V @ 8mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 2A.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 2A volts can be achieved.
STX112-AP Features
the DC current gain for this device is 1000 @ 1A 4V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
STX112-AP Applications
There are a lot of STMicroelectronics
STX112-AP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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