STX112-AP
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- Mfr.Part #
- STX112-AP
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 2A TO92AP
- Stock
- 18,912
- In Stock ：
- 18,912
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 100V
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 1A 4V
- Transistor Type :
- NPN - Darlington
- Terminal Form :
- Wire
- Collector Emitter Saturation Voltage :
- 2.5V
- Collector Base Voltage (VCBO) :
- 100V
- Voltage - Rated DC :
- 100V
- Lead Free :
- Lead Free
- Current Rating :
- 2A
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 8mA, 2A
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 100V
- Current - Collector Cutoff (Max) :
- 2mA
- Polarity :
- NPN
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Max Power Dissipation :
- 1.2W
- hFE Min :
- 500
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Terminations :
- 3
- Terminal Position :
- BOTTOM
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 2A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 100V
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Base Part Number :
- STX112
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Box (TB)
- Additional Feature :
- BUILT IN BIAS RESISTANCE RATIO IS 0.0067
- Datasheets
- STX112-AP
NPN - Darlington 150°C TJ 2mA 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
STX112-AP Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 1000 @ 1A 4V.The collector emitter saturation voltage is 2.5V, which allows for maximum design flexibility.When VCE saturation is 2.5V @ 8mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 2A.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 2A volts can be achieved.
STX112-AP Features
the DC current gain for this device is 1000 @ 1A 4V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
STX112-AP Applications
There are a lot of STMicroelectronics
STX112-AP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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