STX112

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Mfr.Part #
STX112
Manufacturer
STMicroelectronics
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
TRANS NPN DARL 100V 2A TO92-3
Stock
31,034
In Stock :
31,034

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
RoHS Status :
ROHS3 Compliant
Qualification Status :
Not Qualified
Terminal Finish :
Matte Tin (Sn)
Operating Temperature :
150°C TJ
Mounting Type :
Through Hole
Collector Emitter Breakdown Voltage :
100V
Current Rating :
2A
Current - Collector Cutoff (Max) :
2mA
hFE Min :
500
Pin Count :
3
Packaging :
Bulk
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 1A 4V
Collector Base Voltage (VCBO) :
100V
Max Power Dissipation :
1.2W
Emitter Base Voltage (VEBO) :
5V
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Mount :
Through Hole
JESD-609 Code :
e3
ECCN Code :
EAR99
Number of Elements :
1
Lead Free :
Lead Free
Pbfree Code :
yes
Reach Compliance Code :
not_compliant
Polarity :
NPN
Max Collector Current :
2A
Number of Terminations :
3
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
HTS Code :
8541.29.00.95
Voltage - Rated DC :
100V
Base Part Number :
STX112
Transistor Type :
NPN - Darlington
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 8mA, 2A
Terminal Position :
BOTTOM
Transistor Application :
SWITCHING
JESD-30 Code :
O-PBCY-T3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Collector Emitter Voltage (VCEO) :
2.5V
Transistor Element Material :
SILICON
Element Configuration :
Single
Datasheets
STX112
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics STX112 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Mounting Type:Through Hole, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Number of Terminations:3, Base Part Number:STX112, STX112 pinout, STX112 datasheet PDF, STX112 amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics STX112 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STX112


NPN - Darlington 150°C TJ 2mA 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole

STX112 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 1000 @ 1A 4V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 2.5V @ 8mA, 2A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 2A.Collector current can be as low as 2A volts at its maximum.

STX112 Features


the DC current gain for this device is 1000 @ 1A 4V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A


STX112 Applications


There are a lot of STMicroelectronics
STX112 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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