STW8NK80Z

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±30V

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 3.1A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

1320pF @ 25V

REACH SVHC :

No SVHC

Number of Pins :

3

FET Type :

N-Channel

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

800V

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4.5V @ 100μA

Continuous Drain Current (ID) :

6.2A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

15.75mm

Series :

SuperMESH™

Power Dissipation-Max :

140W Tc

Height :

20.15mm

Turn On Delay Time :

17 ns

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

800V

Mount :

Through Hole

Current Rating :

6.2A

Power Dissipation :

140W

Radiation Hardening :

No

Pulsed Drain Current-Max (IDM) :

24.8A

Base Part Number :

STW8N

Current - Continuous Drain (Id) @ 25°C :

6.2A Tc

JESD-609 Code :

e3

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Fall Time (Typ) :

28 ns

Number of Elements :

1

Gate to Source Voltage (Vgs) :

30V

Package / Case :

TO-247-3

Contact Plating :

Tin

Element Configuration :

Single

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

12 Weeks

Rise Time :

30ns

Lead Free :

Lead Free

Width :

5.15mm

Threshold Voltage :

3.75V

Number of Terminations :

3

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

46nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

Turn-Off Delay Time :

48 ns