STW45N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

20.15mm

ECCN Code :

EAR99

JESD-609 Code :

e3

Power Dissipation-Max :

210W Tc

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Series :

MDmesh™ V

Resistance :

78mOhm

Continuous Drain Current (ID) :

35A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5V @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

91nC @ 10V

Gate to Source Voltage (Vgs) :

25V

Power Dissipation :

208W

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Mount :

Through Hole

Number of Terminations :

3

Base Part Number :

STW45N

Terminal Finish :

Matte Tin (Sn)

Drain to Source Breakdown Voltage :

650V

Transistor Element Material :

SILICON

Radiation Hardening :

No

FET Type :

N-Channel

Element Configuration :

Single

Operating Temperature :

150°C TJ

Rds On (Max) @ Id, Vgs :

78m Ω @ 19.5A, 10V

Package / Case :

TO-247-3

Factory Lead Time :

17 Weeks

Turn-Off Delay Time :

79.5 ns

Number of Pins :

3

Width :

5.15mm

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Number of Elements :

1

Turn On Delay Time :

79.5 ns

Input Capacitance (Ciss) (Max) @ Vds :

3375pF @ 100V

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Length :

15.75mm

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V