STV160NF02LT4

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

160nC @ 10V

Packaging :

Cut Tape (CT)

Continuous Drain Current (ID) :

160A

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Pulsed Drain Current-Max (IDM) :

640A

Element Configuration :

Single

Number of Pins :

12

Transistor Application :

SWITCHING

Fall Time (Typ) :

240 ns

Series :

STripFET™ II

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.0035Ohm

Operating Temperature :

175°C TJ

JESD-609 Code :

e3

Base Part Number :

STV160

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

1V @ 250μA

Current Rating :

160A

Current - Continuous Drain (Id) @ 25°C :

160A Tc

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 80A, 10V

Additional Feature :

AVALANCHE RATED

Drain to Source Breakdown Voltage :

20V

JESD-30 Code :

R-PDSO-G10

Avalanche Energy Rating (Eas) :

1500 mJ

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

4800pF @ 15V

Transistor Element Material :

SILICON

Power Dissipation-Max :

210W Tc

Voltage - Rated DC :

20V

Package / Case :

PowerSO-10 Exposed Bottom Pad

Reach Compliance Code :

not_compliant

Vgs (Max) :

±15V

Power Dissipation :

210W

Number of Terminations :

10

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

80 ns

Terminal Position :

Dual

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

15V

Pin Count :

10

Terminal Finish :

Matte Tin (Sn) - annealed

Rise Time :

800ns