STU8N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

690pF @ 100V

Turn On Delay Time :

50 ns

Mount :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Pulsed Drain Current-Max (IDM) :

28A

Element Configuration :

Single

Vgs (Max) :

±25V

Drain to Source Breakdown Voltage :

650V

Operating Temperature :

150°C TJ

Rds On (Max) @ Id, Vgs :

600m Ω @ 3.5A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

2.4mm

Power Dissipation :

70W

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

25V

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

REACH SVHC :

No SVHC

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Rise Time :

14ns

Continuous Drain Current (ID) :

7A

Drain-source On Resistance-Max :

0.6Ohm

Turn-Off Delay Time :

50 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

ULTRA-LOW RESISTANCE

Packaging :

Tube

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

70W Tc

Number of Pins :

3

Pin Count :

3

Drain Current-Max (Abs) (ID) :

7A

Length :

6.6mm

Base Part Number :

STU8N

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Terminations :

3

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Height :

6.9mm

Fall Time (Typ) :

11 ns

Threshold Voltage :

4V

Series :

MDmesh™ V

ECCN Code :

EAR99