STU10NM65N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Base Part Number :

STU10N

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

850pF @ 50V

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

480m Ω @ 4.5A, 10V

Time@Peak Reflow Temperature-Max (s) :

30

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Packaging :

Tube

Drain to Source Breakdown Voltage :

650V

Number of Pins :

3

Vgs (Max) :

±25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Number of Elements :

1

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Fall Time (Typ) :

20 ns

Pin Count :

3

Peak Reflow Temperature (Cel) :

260

Drain-source On Resistance-Max :

0.48Ohm

Continuous Drain Current (ID) :

9A

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Reach Compliance Code :

not_compliant

Element Configuration :

Single

Turn-Off Delay Time :

50 ns

FET Type :

N-Channel

Operating Temperature :

150°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

9A

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Power Dissipation :

90W

Power Dissipation-Max :

90W Tc

Gate to Source Voltage (Vgs) :

25V

Terminal Finish :

Matte Tin (Sn) - annealed

Qualification Status :

Not Qualified

Rise Time :

8ns

Transistor Element Material :

SILICON

Series :

MDmesh™ II