STT3P2UH7
- Mfr.Part #
- STT3P2UH7
- Manufacturer
- STMicroelectronics
- Package / Case
- SOT-23-6
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 3A SOT23-6
- Stock
- 2,588
- In Stock :
- 2,588
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Vgs (Max) :
- ±8V
- Gate Charge (Qg) (Max) @ Vgs :
- 4.8nC @ 4.5V
- Number of Channels :
- 1
- Element Configuration :
- Single
- Current - Continuous Drain (Id) @ 25°C :
- 3A Tc
- Drain Current-Max (Abs) (ID) :
- 3A
- Number of Terminations :
- 6
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Rise Time :
- 21ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 510pF @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- ECCN Code :
- EAR99
- Fall Time (Typ) :
- 19 ns
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 1.5A, 4.5V
- Resistance :
- 87mOhm
- Continuous Drain Current (ID) :
- 3A
- Power Dissipation-Max :
- 1.6W Tc
- Package / Case :
- SOT-23-6
- Terminal Form :
- Gull wing
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.8V 4.5V
- RoHS Status :
- ROHS3 Compliant
- FET Type :
- P-Channel
- Drain to Source Voltage (Vdss) :
- 20V
- Mounting Type :
- Surface Mount
- Turn On Delay Time :
- 9 ns
- Number of Elements :
- 1
- Packaging :
- Cut Tape (CT)
- Base Part Number :
- STT3P
- Gate to Source Voltage (Vgs) :
- 8V
- Series :
- STripFET™
- Weight :
- 36.003894mg
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- Turn-Off Delay Time :
- 40 ns
- Drain to Source Breakdown Voltage :
- 30V
- Operating Temperature :
- 150°C TJ
- JESD-30 Code :
- R-PDSO-G6
- Datasheets
- STT3P2UH7

P-Channel Cut Tape (CT) 100m Ω @ 1.5A, 4.5V ±8V 510pF @ 10V 4.8nC @ 4.5V 20V SOT-23-6
STT3P2UH7 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 510pF @ 10V.This device conducts a continuous drain current (ID) of 3A, which is the maximum continuous current transistor can conduct.Using VGS=30V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 30V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 3A.When the device is turned off, a turn-off delay time of 40 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 9 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 8V.This transistor requires a drain-source voltage (Vdss) of 20V.In order to reduce power consumption, this device uses a drive voltage of 1.8V 4.5V volts (1.8V 4.5V).
STT3P2UH7 Features
a continuous drain current (ID) of 3A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 40 ns
a 20V drain to source voltage (Vdss)
STT3P2UH7 Applications
There are a lot of STMicroelectronics
STT3P2UH7 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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