STSJ60NH3LL
- Mfr.Part #
- STSJ60NH3LL
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-SOIC (0.154, 3.90mm Width) Exposed Pad
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 60A 8SOIC
- Stock
- 3,846
- In Stock :
- 3,846
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 8
- Fall Time (Typ) :
- 20 ns
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Gate Charge (Qg) (Max) @ Vgs :
- 24nC @ 4.5V
- Case Connection :
- DRAIN
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Series :
- STripFET™
- Vgs (Max) :
- ±16V
- Packaging :
- Tape and Reel (TR)
- JESD-30 Code :
- R-PDSO-G8
- Input Capacitance (Ciss) (Max) @ Vds :
- 1810pF @ 25V
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Position :
- Dual
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Turn-Off Delay Time :
- 38 ns
- Continuous Drain Current (ID) :
- 15A
- Current Rating :
- 15A
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 3W Ta 50W Tc
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Mount :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Pulsed Drain Current-Max (IDM) :
- 60A
- Number of Terminations :
- 8
- FET Type :
- N-Channel
- Voltage - Rated DC :
- 30V
- Rds On (Max) @ Id, Vgs :
- 5.7m Ω @ 7.5A, 10V
- Drain Current-Max (Abs) (ID) :
- 60A
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Rise Time :
- 65ns
- Terminal Finish :
- NICKEL PALLADIUM GOLD
- Gate to Source Voltage (Vgs) :
- 16V
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Power Dissipation :
- 50W
- JESD-609 Code :
- e4
- Resistance :
- 4mOhm
- Drain to Source Breakdown Voltage :
- 30V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width) Exposed Pad
- Additional Feature :
- LOW THRESHOLD
- Base Part Number :
- STSJ60
- Qualification Status :
- Not Qualified
- Current - Continuous Drain (Id) @ 25°C :
- 60A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Number of Elements :
- 1
- Datasheets
- STSJ60NH3LL

N-Channel Tape & Reel (TR) 5.7m Ω @ 7.5A, 10V ±16V 1810pF @ 25V 24nC @ 4.5V 8-SOIC (0.154, 3.90mm Width) Exposed Pad
STSJ60NH3LL Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1810pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 15A.With a drain-source breakdown voltage of 30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 30V.60A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 38 ns.Peak drain current for this device is 60A, which is its maximum pulsed drain current.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.
STSJ60NH3LL Features
a continuous drain current (ID) of 15A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 38 ns
based on its rated peak drain current 60A.
STSJ60NH3LL Applications
There are a lot of STMicroelectronics
STSJ60NH3LL applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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