STS9NF30L
- Mfr.Part #
- STS9NF30L
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 9A 8SO
- Stock
- 26,912
- In Stock :
- 26,912
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 80ns
- Number of Pins :
- 8
- Drain to Source Breakdown Voltage :
- 30V
- Fall Time (Typ) :
- 24 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Current Rating :
- 9A
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Continuous Drain Current (ID) :
- 9A
- Current - Continuous Drain (Id) @ 25°C :
- 9A Tc
- Packaging :
- Tape and Reel (TR)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Rds On (Max) @ Id, Vgs :
- 20m Ω @ 4.5A, 10V
- Number of Terminations :
- 8
- Base Part Number :
- STS9NF
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Turn-Off Delay Time :
- 38 ns
- Drain Current-Max (Abs) (ID) :
- 9A
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Power Dissipation :
- 2.5W
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Mode :
- ENHANCEMENT MODE
- Qualification Status :
- Not Qualified
- Drain-source On Resistance-Max :
- 0.035Ohm
- Terminal Position :
- Dual
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- yes
- Voltage - Rated DC :
- 30V
- Mount :
- Surface Mount
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 2.5W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 730pF @ 25V
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e4
- Operating Temperature :
- 150°C TJ
- Pulsed Drain Current-Max (IDM) :
- 36A
- Vgs (Max) :
- ±18V
- Pin Count :
- 8
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 12.5nC @ 4.5V
- Number of Elements :
- 1
- Gate to Source Voltage (Vgs) :
- 18V
- Series :
- STripFET™ II
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- STS9NF30L

N-Channel Tape & Reel (TR) 20m Ω @ 4.5A, 10V ±18V 730pF @ 25V 12.5nC @ 4.5V 8-SOIC (0.154, 3.90mm Width)
STS9NF30L Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 730pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 9A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 30V, and this device has a drainage-to-source breakdown voltage of 30VV.Drain current refers to the maximum continuous current a device can conduct, and it is 9A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 38 ns.Peak drain current is 36A, which is the maximum pulsed drain current.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 18V to 1.Using drive voltage (5V 10V), this device contributes to a reduction in overall power consumption.
STS9NF30L Features
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 38 ns
based on its rated peak drain current 36A.
STS9NF30L Applications
There are a lot of STMicroelectronics
STS9NF30L applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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