STS7NF60L

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

7.5A

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Current Rating :

7.5A

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

7.5A Tc

Voltage - Rated DC :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Nominal Vgs :

1 V

Avalanche Energy Rating (Eas) :

350 mJ

Transistor Element Material :

SILICON

Max Junction Temperature (Tj) :

150°C

Terminal Finish :

Matte Tin (Sn)

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

30A

Mounting Type :

Surface Mount

Power Dissipation-Max :

2.5W Tc

Number of Pins :

8

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

20 ns

Pin Count :

8

Resistance :

19.5MOhm

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Series :

STripFET™ II

Drain to Source Breakdown Voltage :

60V

Radiation Hardening :

No

Operating Temperature :

150°C TJ

Additional Feature :

LOW THRESHOLD

Mount :

Surface Mount

Turn-Off Delay Time :

47 ns

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Number of Channels :

1

Packaging :

Tape and Reel (TR)

Power Dissipation :

2.5W

Terminal Form :

Gull wing

Rise Time :

27ns

REACH SVHC :

No SVHC

Rds On (Max) @ Id, Vgs :

19.5m Ω @ 3.5A, 10V

Gate Charge (Qg) (Max) @ Vgs :

34nC @ 4.5V

Vgs (Max) :

±16V

Threshold Voltage :

1V

Base Part Number :

STS7N

Number of Terminations :

8

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Terminal Position :

Dual

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

16V

Factory Lead Time :

12 Weeks

Turn On Delay Time :

15 ns

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 25V

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

1V @ 250μA

Height :

1.75mm