STS6NF20V
- Mfr.Part #
- STS6NF20V
- Manufacturer
- STMicroelectronics
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET N-CH 20V 6A 8SO
- Stock
- 7,358
- In Stock :
- 7,358
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 40m Ω @ 3A, 4.5V
- JESD-609 Code :
- e4
- Height :
- 1.25mm
- Mounting Type :
- Surface Mount
- Continuous Drain Current (ID) :
- 6A
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.95V 4.5V
- Power Dissipation-Max :
- 2.5W Tc
- Number of Pins :
- 8
- Mount :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 8
- Fall Time (Typ) :
- 10 ns
- Pin Count :
- 8
- Transistor Element Material :
- SILICON
- Series :
- STripFET™ II
- Power Dissipation :
- 2.5W
- Input Capacitance (Ciss) (Max) @ Vds :
- 460pF @ 15V
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Peak Reflow Temperature (Cel) :
- 260
- Threshold Voltage :
- 600mV
- Factory Lead Time :
- 12 Weeks
- Gate to Source Voltage (Vgs) :
- 12V
- Pulsed Drain Current-Max (IDM) :
- 24A
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 11.5nC @ 4.5V
- Radiation Hardening :
- No
- Drain to Source Breakdown Voltage :
- 20V
- Length :
- 5mm
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Lead Free :
- Lead Free
- Rise Time :
- 33ns
- Terminal Form :
- Gull wing
- Width :
- 4mm
- Vgs (Max) :
- ±12V
- Current - Continuous Drain (Id) @ 25°C :
- 6A Tc
- Drain Current-Max (Abs) (ID) :
- 6A
- Terminal Position :
- Dual
- Drain-source On Resistance-Max :
- 0.045Ohm
- Terminal Finish :
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Vgs(th) (Max) @ Id :
- 600mV @ 250μA
- Number of Elements :
- 1
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- STS6N
- REACH SVHC :
- No SVHC
- Turn-Off Delay Time :
- 27 ns
- Transistor Application :
- SWITCHING
- Turn On Delay Time :
- 7 ns
- Datasheets
- STS6NF20V

N-Channel Tape & Reel (TR) 40m Ω @ 3A, 4.5V ±12V 460pF @ 15V 11.5nC @ 4.5V 8-SOIC (0.154, 3.90mm Width)
STS6NF20V Description
With a voltage of 20V, the STS6NF20V is an N-channel Power MOSFET from STMicroelectronics. STMicroelectronics' STripFETTM technology, which is specifically intended to minimize input capacitance and gate charge, was used to build this Power MOSFET series. This qualifies the device for usage as the principal switch in modern high-efficiency isolated DC-DC converters for telecom and computer applications, as well as applications requiring low gate charge driving.
STS6NF20V Features
-
Ultra-low threshold gate drive
-
100% avalanche tested
-
Low gate charge
STS6NF20V Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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