STS6NF20V

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e4

Height :

1.25mm

Power Dissipation-Max :

2.5W Tc

Terminal Form :

Gull wing

Number of Pins :

8

Continuous Drain Current (ID) :

6A

Vgs(th) (Max) @ Id :

600mV @ 250μA

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

ECCN Code :

EAR99

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Pin Count :

8

Number of Elements :

1

Package / Case :

8-SOIC (0.154, 3.90mm Width)

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Fall Time (Typ) :

10 ns

Power Dissipation :

2.5W

Rds On (Max) @ Id, Vgs :

40m Ω @ 3A, 4.5V

Width :

4mm

Transistor Element Material :

SILICON

Rise Time :

33ns

Factory Lead Time :

12 Weeks

FET Type :

N-Channel

Terminal Position :

Dual

Drain Current-Max (Abs) (ID) :

6A

Vgs (Max) :

±12V

Drain-source On Resistance-Max :

0.045Ohm

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Base Part Number :

STS6N

RoHS Status :

ROHS3 Compliant

Length :

5mm

Peak Reflow Temperature (Cel) :

260

Series :

STripFET™ II

Operating Temperature :

150°C TJ

Turn On Delay Time :

7 ns

Drain to Source Breakdown Voltage :

20V

Mounting Type :

Surface Mount

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

Input Capacitance (Ciss) (Max) @ Vds :

460pF @ 15V

Mount :

Surface Mount

Number of Terminations :

8

Turn-Off Delay Time :

27 ns

Gate Charge (Qg) (Max) @ Vgs :

11.5nC @ 4.5V

Drive Voltage (Max Rds On,Min Rds On) :

1.95V 4.5V

Gate to Source Voltage (Vgs) :

12V

Pulsed Drain Current-Max (IDM) :

24A

Radiation Hardening :

No

Transistor Application :

SWITCHING

Threshold Voltage :

600mV