STS2DPFS20V

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Series :

STripFET™ II

Number of Elements :

1

Continuous Drain Current (ID) :

2.5A

Drain to Source Voltage (Vdss) :

20V

Power Dissipation-Max :

2W Tc

Vgs (Max) :

±12V

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

2A

FET Feature :

Schottky Diode (Isolated)

Drain to Source Breakdown Voltage :

-20V

Rise Time :

30ns

Vgs(th) (Max) @ Id :

600mV @ 250μA

Drain-source On Resistance-Max :

0.25Ohm

Current - Continuous Drain (Id) @ 25°C :

2.5A Tc

Power Dissipation :

2W

Configuration :

SINGLE WITH BUILT-IN DIODE

Fall Time (Typ) :

11 ns

Terminal Form :

Gull wing

Input Capacitance (Ciss) (Max) @ Vds :

315pF @ 15V

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Turn-Off Delay Time :

45 ns

JESD-609 Code :

e4

Base Part Number :

STS2D

Mounting Type :

Surface Mount

Terminal Position :

Dual

Current Rating :

-2.5A

RoHS Status :

ROHS3 Compliant

Qualification Status :

Not Qualified

Number of Pins :

8

Gate to Source Voltage (Vgs) :

12V

Voltage - Rated DC :

-20V

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

2.7V 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Pulsed Drain Current-Max (IDM) :

10A

Pin Count :

8

Terminal Finish :

Nickel/Palladium/Gold (Ni/Pd/Au)

Time@Peak Reflow Temperature-Max (s) :

30

Operating Temperature :

150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

4.7nC @ 4.5V

Number of Terminations :

8

Packaging :

Cut Tape (CT)

Rds On (Max) @ Id, Vgs :

200m Ω @ 1A, 4.5V

FET Type :

P-Channel