STPLED524

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

7ns

Power Dissipation-Max :

45W Tc

Drain Current-Max (Abs) (ID) :

4A

DS Breakdown Voltage-Min :

525V

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

30V

Avalanche Energy Rating (Eas) :

110 mJ

Number of Pins :

3

Terminal Position :

Single

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

2.6 Ω @ 2.2A, 10V

Packaging :

Tube

Mounting Type :

Through Hole

Fall Time (Typ) :

14 ns

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Turn-Off Delay Time :

21 ns

Base Part Number :

STPLED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

4A

Input Capacitance (Ciss) (Max) @ Vds :

340pF @ 100V

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

18 Weeks

Radiation Hardening :

No

Turn On Delay Time :

8 ns

JEDEC-95 Code :

TO-220AB

Drain to Source Voltage (Vdss) :

525V

Package / Case :

TO-220-3

Number of Terminations :

3