STN5PF02V

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-261-4, TO-261AA

Input Capacitance (Ciss) (Max) @ Vds :

412pF @ 15V

Terminal Finish :

Matte Tin (Sn)

Element Configuration :

Single

JESD-609 Code :

e3

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

450mV @ 250μA

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 2.5V

Power Dissipation :

2.5W

Fall Time (Typ) :

20 ns

Rds On (Max) @ Id, Vgs :

80m Ω @ 2.1A, 4.5V

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

38 ns

Series :

STripFET™ II

Lead Free :

Lead Free

Current Rating :

-5A

Drain-source On Resistance-Max :

0.1Ohm

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PDSO-G4

Drain to Source Breakdown Voltage :

-20V

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

8V

Vgs (Max) :

±8V

Terminal Form :

Gull wing

Pin Count :

4

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

40

Current :

42A

Voltage :

20V

Transistor Application :

SWITCHING

Base Part Number :

STN5P

Rise Time :

47ns

Voltage - Rated DC :

-20V

Power Dissipation-Max :

2.5W Tc

Number of Terminations :

4

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Turn On Delay Time :

11 ns

Packaging :

Tape and Reel (TR)

FET Type :

P-Channel

Mounting Type :

Surface Mount

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

4.2A Tc

Continuous Drain Current (ID) :

4.2A