STN3P6F6

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

-60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

-3A

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

6.4nC @ 10V

Number of Channels :

1

Turn-Off Delay Time :

14 ns

REACH SVHC :

No SVHC

Width :

3.7mm

RoHS Status :

ROHS3 Compliant

Packaging :

Cut Tape (CT)

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Number of Elements :

1

Height :

1.9mm

Transistor Application :

SWITCHING

Resistance :

130mOhm

Fall Time (Typ) :

3.7 ns

Mount :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Number of Pins :

4

Power Dissipation :

2.6W

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

P-Channel

Drain to Source Voltage (Vdss) :

60V

Reach Compliance Code :

not_compliant

Package / Case :

TO-261-4, TO-261AA

Operating Mode :

ENHANCEMENT MODE

Max Junction Temperature (Tj) :

175°C

Number of Terminations :

4

Rds On (Max) @ Id, Vgs :

160m Ω @ 1.5A, 10V

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

340pF @ 48V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Lead Free :

Lead Free

Threshold Voltage :

-4V

JESD-609 Code :

e3

Terminal Position :

Dual

Vgs (Max) :

±20V

Rise Time :

5.3ns

Operating Temperature :

-55°C~175°C TJ

Series :

DeepGATE™, STripFET™ VI

Turn On Delay Time :

6.4 ns

Terminal Finish :

Matte Tin (Sn)

Length :

6.7mm

Power Dissipation-Max :

2.6W Tc

Factory Lead Time :

20 Weeks

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

3A

Base Part Number :

STN3P