STLD200N4F6AG

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Terminal Position :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

10700pF @ 10V

Terminal Form :

Flat

Number of Terminations :

5

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Drain-source On Resistance-Max :

0.002Ohm

Vgs(th) (Max) @ Id :

4V @ 1mA

Case Connection :

DRAIN

Base Part Number :

STLD20

Package / Case :

8-PowerWDFN

DS Breakdown Voltage-Min :

40V

Drain Current-Max (Abs) (ID) :

120A

Gate Charge (Qg) (Max) @ Vgs :

172nC @ 10V

Transistor Application :

SWITCHING

Power Dissipation-Max :

158W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

1.5m Ω @ 75A, 10V

Vgs (Max) :

±20V

Pulsed Drain Current-Max (IDM) :

480A

Avalanche Energy Rating (Eas) :

400 mJ

Series :

Automotive, AEC-Q101, STripFET™ F6

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Surface Mount :

yes

Factory Lead Time :

20 Weeks

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Drain to Source Voltage (Vdss) :

40V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

6.5V 10V

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-F5