STL21N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

650V

Fall Time (Typ) :

12 ns

JESD-30 Code :

S-PDSO-N5

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

179m Ω @ 8.5A, 10V

Number of Pins :

4

Factory Lead Time :

12 Weeks

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Lifecycle Status :

NRND (Last Updated: 8 months ago)

Lead Free :

Lead Free

Turn-Off Delay Time :

37 ns

Input Capacitance (Ciss) (Max) @ Vds :

1950pF @ 100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

2.7A

Number of Terminations :

5

Terminal Position :

Dual

Package / Case :

8-PowerVDFN

RoHS Status :

ROHS3 Compliant

Additional Feature :

ULTRA-LOW RESISTANCE

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Mounting Type :

Surface Mount

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

5V @ 250μA

Operating Mode :

ENHANCEMENT MODE

Series :

MDmesh™ V

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

17A

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

150°C TJ

Packaging :

Tape and Reel (TR)

Radiation Hardening :

No

JESD-609 Code :

e3

Power Dissipation-Max :

3W Ta 125W Tc

Pin Count :

8

Case Connection :

DRAIN

Rise Time :

10ns

ECCN Code :

EAR99

Number of Elements :

1

Vgs (Max) :

±25V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Gate to Source Voltage (Vgs) :

25V

Transistor Application :

SWITCHING

Base Part Number :

STL21

Power Dissipation :

3W

FET Type :

N-Channel

Terminal Finish :

Matte Tin (Sn) - annealed