STI6N62K3

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Mfr.Part #
STI6N62K3
Manufacturer
STMicroelectronics
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Datasheet
Download
Description
MOSFET N-CH 620V 5.5A I2PAK
Stock
66
In Stock :
66

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Turn On Delay Time :
22 ns
Length :
10.4mm
Lifecycle Status :
ACTIVE (Last Updated: 7 months ago)
Vgs(th) (Max) @ Id :
4.5V @ 50μA
Series :
SuperMESH3™
Mount :
Through Hole
Width :
4.6mm
Input Capacitance (Ciss) (Max) @ Vds :
875pF @ 50V
Configuration :
SINGLE WITH BUILT-IN DIODE
Number of Pins :
3
Pin Count :
3
Number of Terminations :
3
Operating Temperature :
-55°C~150°C TJ
Terminal Finish :
Tin (Sn)
Terminal Position :
Single
RoHS Status :
ROHS3 Compliant
Lead Free :
Lead Free
Rise Time :
12ns
Gate Charge (Qg) (Max) @ Vgs :
34nC @ 10V
Gate to Source Voltage (Vgs) :
30V
Power Dissipation-Max :
90W Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Base Part Number :
STI6N
Continuous Drain Current (ID) :
5.5A
Pulsed Drain Current-Max (IDM) :
22A
Transistor Application :
SWITCHING
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package / Case :
TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Elements :
1
Mounting Type :
Through Hole
ECCN Code :
EAR99
Turn-Off Delay Time :
49 ns
Operating Mode :
ENHANCEMENT MODE
Avalanche Energy Rating (Eas) :
140 mJ
Threshold Voltage :
3.75V
Fall Time (Typ) :
20 ns
Radiation Hardening :
No
Additional Feature :
ULTRA LOW-ON RESISTANCE
Drain to Source Voltage (Vdss) :
620V
Nominal Vgs :
3.75 V
JESD-609 Code :
e3
REACH SVHC :
No SVHC
DS Breakdown Voltage-Min :
620V
Height :
10.75mm
Transistor Element Material :
SILICON
Factory Lead Time :
12 Weeks
Vgs (Max) :
±30V
Current - Continuous Drain (Id) @ 25°C :
5.5A Tc
FET Type :
N-Channel
Rds On (Max) @ Id, Vgs :
1.2 Ω @ 2.8A, 10V
Packaging :
Tube
Datasheets
STI6N62K3
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STI6N62K3 from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, Base Part Number:STI6N, Package / Case:TO-262-3 Long Leads, I2Pak, TO-262AA, Mounting Type:Through Hole, STI6N62K3 pinout, STI6N62K3 datasheet PDF, STI6N62K3 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STI6N62K3 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STI6N62K3


N-Channel Tube 1.2 Ω @ 2.8A, 10V ±30V 875pF @ 50V 34nC @ 10V 620V TO-262-3 Long Leads, I2Pak, TO-262AA

STI6N62K3 Overview


In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 140 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 875pF @ 50V.This device conducts a continuous drain current (ID) of 5.5A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 49 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 22A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 22 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.Activation of any electrical operation happens at threshold voltage, and this transistor has 3.75V threshold voltage.A normal operation of the DS requires keeping the breakdown voltage above 620V.This transistor requires a drain-source voltage (Vdss) of 620V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

STI6N62K3 Features


the avalanche energy rating (Eas) is 140 mJ
a continuous drain current (ID) of 5.5A
the turn-off delay time is 49 ns
based on its rated peak drain current 22A.
a threshold voltage of 3.75V
a 620V drain to source voltage (Vdss)


STI6N62K3 Applications


There are a lot of STMicroelectronics
STI6N62K3 applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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