STI55NF03L

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

13m Ω @ 27.5A, 10V

Base Part Number :

STI55N

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 4.5V

Avalanche Energy Rating (Eas) :

120 mJ

Input Capacitance (Ciss) (Max) @ Vds :

1265pF @ 25V

Terminal Position :

Single

Series :

STripFET™ II

Drain-source On Resistance-Max :

0.02Ohm

Number of Elements :

1

DS Breakdown Voltage-Min :

30V

JESD-30 Code :

R-PSIP-T3

Factory Lead Time :

12 Weeks

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

55A Tc

Pin Count :

3

FET Type :

N-Channel

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Operating Temperature :

-60°C~175°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

55A

Number of Terminations :

3

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

220A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

80W Tc

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

30V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Packaging :

Tube

Case Connection :

DRAIN

Vgs (Max) :

±16V