STI20N65M5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

25V

Radiation Hardening :

No

Fall Time (Typ) :

7.5 ns

Number of Elements :

1

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Lead Free :

Lead Free

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

270 mJ

Rds On (Max) @ Id, Vgs :

190m Ω @ 9A, 10V

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Drain to Source Breakdown Voltage :

650V

Packaging :

Tube

Vgs (Max) :

±25V

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Pulsed Drain Current-Max (IDM) :

72A

Mount :

Through Hole

Power Dissipation :

130W

Continuous Drain Current (ID) :

18A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Power Dissipation-Max :

130W Tc

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

1434pF @ 100V

FET Type :

N-Channel

Number of Pins :

3

Base Part Number :

STI20N

Series :

MDmesh™ V

RoHS Status :

ROHS3 Compliant

Rise Time :

7.5ns

Number of Terminations :

3

Factory Lead Time :

17 Weeks