STH80N10F7-2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

RoHS Status :

ROHS3 Compliant

Drain to Source Breakdown Voltage :

100V

Continuous Drain Current (ID) :

80A

Lead Free :

Lead Free

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Packaging :

Cut Tape (CT)

Operating Temperature :

-55°C~175°C TJ

Rise Time :

32ns

Power Dissipation-Max :

110W Tc

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Mount :

Surface Mount

Terminal Form :

Gull wing

Width :

9.17mm

Drain-source On Resistance-Max :

0.0095Ohm

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

FET Type :

N-Channel

Case Connection :

DRAIN

Additional Feature :

ULTRA LOW-ON RESISTANCE

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

37 Weeks

Transistor Element Material :

SILICON

Base Part Number :

STH80N

Power Dissipation :

110W

Input Capacitance (Ciss) (Max) @ Vds :

3100pF @ 50V

Number of Terminations :

2

Height :

4.8mm

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Turn-Off Delay Time :

36 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

9.5m Ω @ 40A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

1

Weight :

3.949996g

Number of Elements :

2

Series :

DeepGATE™, STripFET™ VII

Transistor Application :

SWITCHING

Length :

10.4mm

Fall Time (Typ) :

13 ns

Turn On Delay Time :

19 ns