STH6N95K5-2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

6A

Avalanche Energy Rating (Eas) :

90 mJ

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Power Dissipation-Max :

110W Tc

Packaging :

Cut Tape (CT)

Pulsed Drain Current-Max (IDM) :

24A

Vgs(th) (Max) @ Id :

5V @ 100µA

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

26 Weeks

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

950V

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Series :

MDmesh™ K5

Number of Elements :

1

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

1.25 Ω @ 3A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Base Part Number :

STH6N

Continuous Drain Current (ID) :

6A

Number of Terminations :

2

Lead Free :

Lead Free

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 100V

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Mount :

Surface Mount

Drain to Source Voltage (Vdss) :

950V