STH210N75F6-2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Breakdown Voltage :

75V

Continuous Drain Current (ID) :

180A

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Threshold Voltage :

2V

Operating Temperature :

-55°C~175°C TJ

Mount :

Surface Mount

Power Dissipation :

300W

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 90A, 10V

Pin Count :

3

Element Configuration :

Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

720A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

STH210

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

180A Tc

Length :

15.8mm

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Width :

10.4mm

Input Capacitance (Ciss) (Max) @ Vds :

11800pF @ 25V

Terminal Form :

Gull wing

Height :

4.8mm

Power Dissipation-Max :

300W Tc

Gate Charge (Qg) (Max) @ Vgs :

171nC @ 10V

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

71 ns

Turn On Delay Time :

34 ns

Gate to Source Voltage (Vgs) :

20V

Number of Elements :

1

REACH SVHC :

No SVHC

FET Type :

N-Channel

Series :

DeepGATE™, STripFET™ VI

Mounting Type :

Surface Mount

Radiation Hardening :

No

Turn-Off Delay Time :

154 ns

Resistance :

2.8MOhm

Rise Time :

70ns