STH15NB50FI

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Power Dissipation-Max :

80W Tc

Avalanche Energy Rating (Eas) :

850 mJ

Series :

PowerMESH™

Pulsed Drain Current-Max (IDM) :

58.4A

FET Type :

N-Channel

Number of Elements :

1

Base Part Number :

STH15N

Transistor Application :

SWITCHING

Number of Terminations :

3

RoHS Status :

Non-RoHS Compliant

Case Connection :

Isolated

Continuous Drain Current (ID) :

10.5A

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

360m Ω @ 7.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

3400pF @ 25V

Mount :

Through Hole

Drain to Source Voltage (Vdss) :

500V

Operating Temperature :

150°C TJ

Drain-source On Resistance-Max :

0.36ohm

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

500V

JESD-30 Code :

R-PSFM-T3

Vgs(th) (Max) @ Id :

5V @ 250μA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

Package / Case :

ISOWATT-218-3

Additional Feature :

AVALANCHE RATED

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

80nC @ 10V

Lead Free :

Contains Lead

Qualification Status :

Not Qualified

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

10.5A Tc

Vgs (Max) :

±30V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)