STH150N10F7-2
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- Mfr.Part #
- STH150N10F7-2
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 110A H2PAK-2
- Stock
- 21,938
- In Stock ：
- 21,938
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 250W Tc
- Length :
- 10.4mm
- Series :
- DeepGATE™, STripFET™ VII
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 4.5V @ 250μA
- Base Part Number :
- STH150
- Turn On Delay Time :
- 33 ns
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Weight :
- 3.949996g
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 117nC @ 10V
- Width :
- 10.57mm
- Number of Channels :
- 1
- RoHS Status :
- ROHS3 Compliant
- Height :
- 4.8mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 8115pF @ 50V
- Rds On (Max) @ Id, Vgs :
- 3.9m Ω @ 55A, 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Fall Time (Typ) :
- 33 ns
- Drain to Source Breakdown Voltage :
- 100V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- Operating Temperature :
- -55°C~175°C TJ
- Factory Lead Time :
- 37 Weeks
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Packaging :
- Cut Tape (CT)
- Turn-Off Delay Time :
- 72 ns
- Vgs (Max) :
- ±20V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Continuous Drain Current (ID) :
- 110A
- FET Type :
- N-Channel
- Rise Time :
- 57ns
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- Datasheets
- STH150N10F7-2
N-Channel Cut Tape (CT) 3.9m Ω @ 55A, 10V ±20V 8115pF @ 50V 117nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
STH150N10F7-2 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 8115pF @ 50V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 100V.As a result of its turn-off delay time, which is 72 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 33 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In addition to reducing power consumption, this device uses drive voltage (10V).
STH150N10F7-2 Features
a continuous drain current (ID) of 110A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 72 ns
STH150N10F7-2 Applications
There are a lot of STMicroelectronics
STH150N10F7-2 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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