STFW3N170

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

Isolated

Power Dissipation-Max :

63W Tc

Transistor Element Material :

SILICON

Package / Case :

ISOWATT218FX

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

2.3A

Packaging :

Tube

Drain to Source Voltage (Vdss) :

1700V

Avalanche Energy Rating (Eas) :

2 mJ

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Continuous Drain Current (ID) :

2.6A

DS Breakdown Voltage-Min :

1700V

Pulsed Drain Current-Max (IDM) :

10.4A

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

PowerMESH™

Base Part Number :

STFW

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

1100pF @ 100V

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Terminal Position :

Single

ECCN Code :

EAR99

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

13 Ω @ 1.3A, 10V

Vgs (Max) :

±30V

Mounting Type :

Through Hole

Factory Lead Time :

8 Weeks

Gate Charge (Qg) (Max) @ Vgs :

44nC @ 10V

FET Type :

N-Channel

Mount :

Through Hole

JESD-30 Code :

R-PSFM-T3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

2.6A Tc