STFU15NM65N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

33.3nC @ 10V

JESD-30 Code :

R-PSFM-T3

Packaging :

Tube

Number of Elements :

1

Factory Lead Time :

16 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

983pF @ 50V

Power Dissipation-Max :

30W Tc

Drain-source On Resistance-Max :

0.38Ohm

Drain to Source Voltage (Vdss) :

650V

Rds On (Max) @ Id, Vgs :

380m Ω @ 6A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

JEDEC-95 Code :

TO-220AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

MDmesh™ II

FET Type :

N-Channel

Terminal Finish :

Matte Tin (Sn)

Terminal Position :

Single

RoHS Status :

Non-RoHS Compliant

Case Connection :

Isolated

Vgs (Max) :

±25V

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Package / Case :

TO-220-3 Full Pack

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

187 mJ

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Pulsed Drain Current-Max (IDM) :

48A

Base Part Number :

STFU1

DS Breakdown Voltage-Min :

650V

Reach Compliance Code :

not_compliant

Continuous Drain Current (ID) :

12A

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 250µA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole