STFI13N65M2

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Transistor Element Material :

SILICON

Base Part Number :

STFI13N

DS Breakdown Voltage-Min :

650V

Series :

MDmesh™ M2

Packaging :

Tube

Drain to Source Voltage (Vdss) :

650V

Input Capacitance (Ciss) (Max) @ Vds :

590pF @ 100V

Vgs (Max) :

±25V

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Continuous Drain Current (ID) :

10A

Case Connection :

Isolated

Number of Terminations :

3

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.43Ohm

Avalanche Energy Rating (Eas) :

350 mJ

Rds On (Max) @ Id, Vgs :

430m Ω @ 5A, 10V

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-281

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Through Hole

Operating Temperature :

150°C TJ

Power Dissipation-Max :

25W Tc

Package / Case :

TO-262-3 Full Pack, I2Pak

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

40A

JESD-30 Code :

R-PSFM-T3

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE