STF57N65M5
- Mfr.Part #
- STF57N65M5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 42A TO220FP
- Stock
- 348
- In Stock :
- 348
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation-Max :
- 40W Tc
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Height :
- 16.4mm
- Vgs (Max) :
- ±25V
- Width :
- 4.6mm
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-220-3 Full Pack
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Element Configuration :
- Single
- Base Part Number :
- STF57N
- Number of Elements :
- 1
- Rise Time :
- 15ns
- Turn On Delay Time :
- 73 ns
- Power Dissipation :
- 40W
- JEDEC-95 Code :
- TO-220AB
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 42A Tc
- Continuous Drain Current (ID) :
- 42A
- Input Capacitance (Ciss) (Max) @ Vds :
- 4200pF @ 100V
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Case Connection :
- Isolated
- Drain to Source Breakdown Voltage :
- 650V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 17 Weeks
- Avalanche Energy Rating (Eas) :
- 960 mJ
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 98nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 63m Ω @ 21A, 10V
- Gate to Source Voltage (Vgs) :
- 25V
- ECCN Code :
- EAR99
- FET Type :
- N-Channel
- Series :
- MDmesh™ V
- Turn-Off Delay Time :
- 12 ns
- Resistance :
- 63mOhm
- Fall Time (Typ) :
- 19 ns
- Length :
- 10.4mm
- Number of Pins :
- 3
- Datasheets
- STF57N65M5

N-Channel Tube 63m Ω @ 21A, 10V ±25V 4200pF @ 100V 98nC @ 10V TO-220-3 Full Pack
STF57N65M5 Description
These products are N-channel MDmeshTM V Power MOSFETs built on a cutting-edge proprietary vertical manufacturing technique with the well-known PowerMESHTM horizontal layout architecture from STMicroelectronics. The resulting product is especially well suited for applications that call for great power density and exceptional efficiency since it has an extraordinarily low onresistance that is unmatched among silicon-based Power MOSFETs.
STF57N65M5 Features
-
Worldwide best RDS(on)*area amongst the silicon based devices
-
Higher VDSS rating, high dv/dt capability
-
Excellent switching performance
-
Easy to drive, 100% avalanche tested
STF57N65M5 Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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