STF2N80K5
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- Mfr.Part #
- STF2N80K5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 2A TO220FP
- Stock
- 18,005
- In Stock ：
- 18,005
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Turn On Delay Time :
- 8 ns
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 5V @ 100µA
- Packaging :
- Tube
- Length :
- 10.4mm
- Number of Pins :
- 3
- Current - Continuous Drain (Id) @ 25°C :
- 2A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 4.5 Ω @ 1A, 10V
- Avalanche Energy Rating (Eas) :
- 60.5 mJ
- Turn-Off Delay Time :
- 19 ns
- Case Connection :
- Isolated
- Height :
- 16.4mm
- ECCN Code :
- EAR99
- Series :
- SuperMESH5™
- Base Part Number :
- STF2N
- Power Dissipation :
- 20W
- Number of Terminations :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 3nC @ 10V
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Factory Lead Time :
- 17 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Weight :
- 329.988449mg
- Power Dissipation-Max :
- 20W Tc
- Gate to Source Voltage (Vgs) :
- 30V
- Continuous Drain Current (ID) :
- 2A
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-220-3 Full Pack
- Input Capacitance (Ciss) (Max) @ Vds :
- 95pF @ 100V
- Drain to Source Breakdown Voltage :
- 800V
- Drain Current-Max (Abs) (ID) :
- 2A
- Element Configuration :
- Single
- Pulsed Drain Current-Max (IDM) :
- 8A
- JEDEC-95 Code :
- TO-220AB
- RoHS Status :
- ROHS3 Compliant
- Width :
- 4.6mm
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- STF2N80K5
N-Channel Tube 4.5 Ω @ 1A, 10V 95pF @ 100V 3nC @ 10V TO-220-3 Full Pack
STF2N80K5 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 60.5 mJ.The maximum input capacitance of this device is 95pF @ 100V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 2A.When VGS=800V, and ID flows to VDS at 800VVDS, the drain-source breakdown voltage is 800V in this device.As shown in the table below, the drain current of this device is 2A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 19 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 8A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 8 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
STF2N80K5 Features
the avalanche energy rating (Eas) is 60.5 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 19 ns
based on its rated peak drain current 8A.
STF2N80K5 Applications
There are a lot of STMicroelectronics
STF2N80K5 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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