STF28NM60ND

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

16.4mm

Drain to Source Breakdown Voltage :

650V

Fall Time (Typ) :

27 ns

Turn-Off Delay Time :

92 ns

Rise Time :

21.5ns

Number of Terminations :

3

Gate to Source Voltage (Vgs) :

25V

Transistor Element Material :

SILICON

Vgs (Max) :

±25V

Turn On Delay Time :

23.5 ns

Width :

4.6mm

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-220AB

Current - Continuous Drain (Id) @ 25°C :

23A Tc

RoHS Status :

ROHS3 Compliant

Mount :

Through Hole

Continuous Drain Current (ID) :

23A

Power Dissipation-Max :

35W Tc

Pulsed Drain Current-Max (IDM) :

92A

Weight :

329.988449mg

Packaging :

Tube

ECCN Code :

EAR99

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

62.5nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

150m Ω @ 11.5A, 10V

Package / Case :

TO-220-3 Full Pack

Series :

FDmesh™ II

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

50 mJ

Mounting Type :

Through Hole

Case Connection :

Isolated

Vgs(th) (Max) @ Id :

5V @ 250μA

Operating Temperature :

150°C TJ

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

STF28

Number of Channels :

1

Input Capacitance (Ciss) (Max) @ Vds :

2090pF @ 100V

Drain to Source Voltage (Vdss) :

600V

Radiation Hardening :

No

Number of Elements :

1

Length :

10.4mm

Element Configuration :

Single